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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION MM4148 1N4148 mini-MELF SIGNAL DIODE Absolute Maximum Ratings (Ta=25C) Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/C (25C) Forward Current IF 150 mA Junction Temp. Tj -65 to 200 C Storage Temp. Tstg -65 to 200 C Mechanical Data Items Package Case Lead/Finish Chip Materials Mini MELF Hermetically sealed glass Double stud/Solder Plating Glass Passivated m i n i -MEL F 1.40 1.30 0.4 0.2 2 Places 3.40 3.20 Dimensions in millimeters Electrical Characteristics (Ta=25C) Ratings Minimum Breakdown Voltage @IR= 100uA Peak Forward Surge Current PW< 1sec. Maximum Forward Voltage IF= 10mA Maximum Reverse Current VR= 20V VR= 75V VR= 20V, Tj= 150C Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100 Maximum Thermal Resistance Maximum Rectification Efficiency Vrf= 2V, f= 100MHz Symbol BV IFsurge VF IR Ratings 100 500 1.0 0.025 5.0 50 4 4 0.35 0.45 Unit V mA V uA Cj trr RJA pF ns C/mW - RECTRON USA 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com |
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